sc-89 ordering information features ? low gate charge for fast switching ? small 1.6 x 1.6 mm footprint ? esd protected gate ? applications ? power management load switch ? level shift ? portable applications such as cell phones, media players, digital cameras, pda's, video games, hand held computers, etc. device shipping 3000/tape&reel 17002nt1 marking marking diagram tf = specific device code m = month code t6 m 1 3 2 (top view) drain gate 3 1 2 source maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source voltage v dss 30 v gate?to?source voltage v gs 10 v continuous drain current (note 1) steady state = 25 c i d 154 ma power dissipation (note 1) steady state = 25 c p d 300 mw pulsed drain current t p 10 s i dm 618 ma operating junction and storage temperature t j , t stg ?55 to 150 c continuous source current (body diode) i sd 154 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 1) r ja 416 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). t6 30 v, 154 ma, single, n?channel, gate esd protection, sc?89 2012-0 willas electronic corp. 2N7002NT1
electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 30 v zero gate voltage drain current i dss v gs = 0 v, v ds = 30 v 1.0 a zero gate voltage drain current i dss v gs = 0 v, v ds = 20 v, t = 85 c 1.0 a gate?to?source leakage current i gss v ds = 0 v, v gs = 10 v 25 a gate?to?source leakage current i gss v ds = 0 v, v gs = 5 v 1.0 a gate?to?source leakage current i gss v ds = 0 v, v gs = 5 v t = 85 c 1.0 a on characteristics (note 2) gate threshold voltage v gs(th) v ds = v gs , i d = 100 a 0.5 1.0 1.5 v drain?to?source on resistance r ds(on) v gs = 4.5 v, i d = 154 ma 1.4 7.0 v gs = 2.5 v, i d = 154 ma 2.3 7.5 forward transconductance g fs v ds = 3 v, i d = 154 ma 80 ms capacitances input capacitance c iss v ds = 5.0 v, f = 1 mhz, v gs = 0 v 11.5 pf output capacitance c oss 10 reverse transfer capacitance c rss 3.5 switching characteristics (note 3) turn?on delay time t d(on) v gs = 4.5 v, v ds = 5.0 v, i d = 75 ma, r g = 10 13 ns rise time t r 15 ns turn?off delay time t d(off) 98 fall time t f 60 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 0.154 ma 0.77 0.9 v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. 2012-0 willas electronic corp. 30 v, 154 ma, single, n?channel, gate esd protection, sc?89 2N7002NT1
typical performance curves t j = 125 c 0 0.16 1.6 0.4 v ds , drain?to?source voltage (volts) i d, drain current (amps) 0.12 0.04 0 figure 1. on?region characteristics 0.6 1.4 2 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) 1 2 0.5 figure 3. on?resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) figure 4. on?resistance vs. drain current and gate voltage ?50 0?25 25 1 0.2 0 50 150 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.05 t j = ?55 c t j = 125 c 75 t j = 25 c i d = 0.15 a v gs = 4.5 v r ds(on), drain?to?source resistance (normalized) t j = 25 c r ds(on), drain?to?source resistance ( ) 1.2 v gs = 2.5 v 0 0.15 1 25 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) 15 v gs = 0 v i dss , leakage (na) t j = 150 c t j = 125 c v gs = 4.5 v 10 100 2 v v ds = 5 v 20 1.4 v 0.08 1.2 v 0.1 30 0.2 0.18 v gs = 10 v 2.5 125100 0 2.0 10 5 1.2 0.8 1.2 1.5 0.2 v gs = 4.5 v t j = 25 c t j = ?55 c i d, drain current (amps) 2 1000 5 v 2.4 v 1.8 1 1 2 0.5 0.05 0 0.15 0.1 2.5 1.5 0.2 0.4 1.4 0.6 1.6 0.8 1.8 0.14 0.1 0.02 0.06 2.8 v 0.16 0.12 0.04 0 0.08 0.2 0.8 1.6 2012-0 willas electronic corp. 30 v, 154 ma, single, n?channel, gate esd protection, sc?89 2N7002NT1
typical performance curves figure 7. capacitance variation 0.02 0 v sd , source?to?drain voltage (volts) figure 8. resistive switching time variation vs. gate resistance i s , source current (amps) v gs = 0 v t j = 25 c 0.16 0.5 0.65 figure 9. diode forward voltage vs. current 0.8 0.6 0.08 0.06 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 5 10 0 5 10 5 t j = 25 c c iss c oss c rss 15 0 20 c iss c rss v ds = 0 v v gs = 0 v v ds v gs r g , gate resistance (ohms) 1 10 100 100 10 t, time (ns) v dd = 5.0 v i d = 75 ma v gs = 4.5 v t r t d(on) 1000 t f t d(off) 1 0.04 25 0.7 0.55 10 15 0.14 20 0.12 0.1 0.75 2012-0 willas electronic corp. 30 v, 154 ma, single, n?channel, gate esd protection, sc?89 2N7002NT1
dimensions in inches and (millimeters) .067(1.70) .045(1.15) .012(0.30)min. .008(0.20) .004(0.10) .031(0.80) .024(0.60) .013(0.33) .009(0.23) .067(1.70) .059(1.50) .040(0.95) .030(0.75) .043(1.10) .035(0.90) 2012-0 willas electronic corp. 30 v, 154 ma, single, n?channel, gate esd protection, sc?89 2N7002NT1 sc-89
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